?
Semiconductor Components Industries, LLC, 2011
November, 2011 ?
Rev. 6
1
Publication Order Number:
MMBD7000LT1/D
MMBD7000LT1G,
SMMBD7000LT1G,
MMBD7000LT3G,
SMMBD7000LT3G
Dual Switching Diode
Features
?
AEC?Q101 Qualified and PPAP Capable
?
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
?
These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
100
Vdc
Forward Current
IF
200
mAdc
Peak Forward Surge Current
IFM(surge)
500
mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR?5 Board
(Note 1)TA
= 25
?C
Derate above 25?C
PD
225
1.8
mW
mW/?C
Thermal Resistance, Junction to
Ambient
RJA
556
?C/W
Total Device Dissipation
Alumina Substrate, (Note 2)
TA
= 25
?C
Derate above 25?C
PD
300
2.4
mW
mW/?C
Thermal Resistance,
Junction?to?Ambient
RJA
417
?C/W
Junction and Storage Temperature
TJ, Tstg
?55 to +150
?C
1. FR?5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
*For additional information on our Pb?Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
MARKING DIAGRAM
SOT?23 (TO?236)
CASE 318
STYLE 11
Device Package Shipping?
ORDERING INFORMATION
MMBD7000LT1G SOT?23
(Pb?Free)
3,000 /
Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
ANODE
3
CATHODE/ANODE
2
CATHODE
MMBD7000LT3G SOT?23
(Pb?Free)
10,000 /
Tape & Reel
1
M5C M
M5C = Specific Device Code
M = Date Code*
= Pb?Free Package
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
SMMBD7000LT1G SOT?23
(Pb?Free)
3,000 /
Tape & Reel
SMMBD7000LT3G SOT?23
(Pb?Free)
10,000 /
Tape & Reel
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相关代理商/技术参数
MMBD7000LT1G 制造商:ON Semiconductor 功能描述:Small Signal Diode
MMBD7000LT1G_09 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Dual Switching Diode These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
MMBD7000LT1HTSA1 制造商:Infineon Technologies AG 功能描述:Diode Switching 100V 0.2A 3-Pin SOT-23 T/R 制造商:Infineon Technologies AG 功能描述:AF DIODES - Tape and Reel 制造商:Infineon Technologies AG 功能描述:DIODE ARRAY 100V 200MA SOT23
MMBD7000LT1XT 制造商:Infineon Technologies AG 功能描述:SWITING 100V 0.2A 3PIN SOT-23 - Tape and Reel
MMBD7000LT3 功能描述:二极管 - 通用,功率,开关 100V 200mA RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube
MMBD7000LT3G 功能描述:二极管 - 通用,功率,开关 100V 200mA RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube
MMBD7000T 功能描述:二极管 - 通用,功率,开关 100V RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube
MMBD7000-T1 制造商:WTE 制造商全称:Won-Top Electronics 功能描述:SURFACE MOUNT FAST SWITCHING DIODE